SK hynix's chief executive has publicly endorsed South Korea's accelerating AI sector and named two memory technologies — 3D stacked DRAM and HBF — as the company's forward priorities, Chosunbiz reports.

The statement places the world's leading HBM supplier on record behind two architectural bets that extend beyond the current high-bandwidth memory generation. The remarks come as AI accelerator demand continues to drive the memory market.

What did the SK hynix chief say?

The executive framed Korea's AI expansion as a broad national surge rather than a single-company opportunity, while positioning SK hynix's technology roadmap — specifically 3D stacked DRAM and HBF — as the vehicles to capture that demand.

The two named technologies mark the relevant signals in the announcement:

• 3D stacked DRAM: a next-generation approach that stacks DRAM cells vertically, moving beyond planar scaling limits.
• HBF: a memory technology the chief promoted as part of the company's push, named alongside 3D DRAM in the same breath.

Why does this matter for the memory market?

SK hynix supplies HBM to major AI accelerator makers, so its leadership's public technology commitments carry weight across the supply chain. Naming 3D stacked DRAM and HBF signals where the company intends to direct engineering and capital after the current HBM cycle.

Korea's semiconductor sector — anchored by SK hynix and Samsung Electronics — has tied its growth outlook to AI infrastructure spending, and the chief's comments reinforce that alignment at the top of the company.

The announcement itself contains no disclosed production timelines, capacity figures or customer names. What it establishes is direction: the chief executive has put SK hynix's weight behind 3D stacked DRAM and HBF as the next steps in Korea's AI-driven memory expansion.