Test report DSG-5704 · Rev A · tested October 14, 2026
Memory & StorageDevice under test
CXMT Pledges 4F2 DRAM Cell This Year; Samsung Confirms Parallel Effort
CXMT says it will launch 4F2 DRAM cells this year, and Samsung CTO Song Jaehyeok confirms parallel development with no timeline attached.
- Read
- 2 min
- Words
- 456
- Node
- 7nm
- Operator
- Priya Raman
Spec summary
- CXMT states it will launch 4F2 DRAM cell technology within this year
- Samsung CTO Song Jaehyeok said: "We're working hard" on 4F2 development
- 4F2 halves cell area versus the mainstream 6F2 design
- Neither company disclosed a production volume, yield figure or product name

Chinese DRAM maker CXMT has stated it will launch 4F2-cell DRAM within this year, according to a report by Asia Economic Daily (아시아경제). Samsung is developing the same cell architecture in parallel. Its CTO, Song Jaehyeok, confirmed the effort but gave no schedule.
The claim places CXMT on a compressed timeline for a technology node that leading memory makers have spent years qualifying. Skepticism is warranted. A stated launch year is not a volume ramp, and the report contains no capacity figures, no yield data and no named products.
What is 4F2 and why does it matter?
4F2 denotes a DRAM cell design occupying four times the minimum feature size (F), half the area of today's mainstream 6F2 cell. Shrinking the cell raises bit density per wafer and cuts cost per bit. That arithmetic explains why every major DRAM vendor pursues it.
The transition is not a simple lithography step. Moving from 6F2 to 4F2 requires a change in cell transistor structure, new capacitor alignment and redesigned wordline and bitline routing. Each element carries yield risk. Samsung and SK hynix have not announced mass production of 4F2 either, which frames CXMT's stated schedule.
What did Samsung actually commit to?
Very little, by design. CTO Song Jaehyeok told the outlet: "We're working hard." That is a confirmation of development, not a roadmap. Samsung did not provide:
- A target production year
- A pilot-line status
- Yield or reliability data
- A named customer or product family
Every promise in this story, on both sides, arrives without numbers attached. The single firm date belongs to CXMT's launch claim, and CXMT has not published supporting specifications.
How credible is CXMT's timeline?
The report offers no independent verification. CXMT has moved quickly from DDR4 into DDR5-class products, so a fast cadence is plausible. But a cell-architecture change of this scale typically moves from pilot to volume over multiple quarters, and a single-sentence launch pledge cannot be checked against fab output. A caveat belongs here: "launch" may mean pilot production, samples or paper announcement, and the report does not say which.
For context on scale: 4F2 halves the cell footprint relative to 6F2, a change comparable in structural difficulty to the move from planar to 3D NAND, which took the industry several years to yield at volume.
What is not said
Three omissions stand out. First, neither company specified a target DRAM generation, such as DDR5 or DDR6. Second, no capacitor architecture was named, a decisive variable for 4F2 feasibility. Third, the report does not state whether CXMT's claim refers to its own fabs or to partnership output. Until those gaps close, the year-end claim remains an assertion, not a specification sheet.
via Google News: DRAM chip (Source)
More from Priya Raman
Show full bio
Correspondent covering money, funding and market shifts around hardware layer of artificial intelligence at Die Signal.
326 articles
Same lot · LOT-C1CA
- DSG-865820nmCXMT Moves Toward 4F² DRAM, Raising Stakes for Samsung
- DSG-588314nmCXMT Targets Server DRAM With 4F² Design for 2025 Release
- DSG-549145nmCXMT's 4F² DRAM Design Signals China's Entry Into Server Memory
- DSG-68693nmCXMT Targets 4F² DDR5 Server Memory Launch by Year-End
- DSG-240620nmCXMT Accelerates 4F² DRAM Push, Targets Year-End Server DDR5 RDIMM Launch